The main routes involve alkylation of gallium trichloride. When this alkylation is effected with ethyl Grignard reagent in ether, the product is the diethyl ether adduct of triethylgallium. The ether is not easily removed. Thus an alternative route involves transmetalation with triethylaluminium according to this simplified equation:[4]
GaCl3 + 3 AlEt3 → GaEt3 + 3 AlClEt2
Triethylgallium readily converts to the air-stable, colorless alkoxide by two routes, oxidation and alcoholysis:[4]
GaEt3 + 0.5 O2 → GaEt2(OEt)
GaEt3 + EtOH → GaEt2(OEt) + EtH
The sweet odor associated with triethylgallium is due to the alkoxide.
TEGa can be a useful alternative to trimethylgallium in the metalorganic vapour phase epitaxy of compound semiconductors because films grown using TEGa have been shown to have a lower carbon impurity concentration.[5]
^Shenaikhatkhate, D; Goyette, R; Dicarlojr, R; Dripps, G (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors". Journal of Crystal Growth. 272 (1–4): 816–821. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.