Nickel monosilicide can be prepared by depositing a nickel layer on silicon and subsequent annealing. In the case of Ni films with thicknesses above 4 nm, the normal phase transition is given by Ni2Si at 250 °C followed by NiSi at 350 °C and NiSi2 at approximately 800 °C.[4] For films with an initial Ni thickness below 4 nm a direct transition from orthorhombic Ni2Si to epitaxial NiSi2−x, skipping the nickel monosilicide phase, is observed.[5]
Uses
Several properties make NiSi an important local contact material in the area of microelectronics, among them a reduced thermal budget, low resistivity of 13–14 μΩ·cm and a reduced Si consumption when compared to alternative compounds.[6]
References
^Shinoda, Daizaburo; Asanabe, Sizuo (1966). "Magnetic Properties of Silicides of Iron Group Transition Elements". Journal of the Physical Society of Japan. 21 (3): 555. Bibcode:1966JPSJ...21..555S. doi:10.1143/JPSJ.21.555.
^Gas, P.; d’Heurle, F. M. (1998). "Diffusion in silicides". In Beke, D. L. (ed.). Landolt-Börnstein - Group III Condensed Matter. Vol. 33A. Springer. pp. 1–38. doi:10.1007/10426818_13. ISBN3-540-60964-4.
^Wopersnow W., Schubert K. (1976) Z. Metallkd., 67, 807–810